Ultrasonically Induced Pathways of Silicon Modification

05 Apr 2012
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Porous silicon with unique optical properties was formed through an ultrasonication method. This technique allows the one step formation of silicon with a purposefully variable porous structure, provides for the possibility of patterned surface-selective modification, and forms photoluminescent centers and defect states, which can act as centers for charge separation.

By Ekaterina V. Skorb, Daria V. Andreeva and Helmuth Möhwald

Angewandte Chemie International Edition, DOI: 10.1002/anie.201105084
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